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| savantic semiconductor product specification silicon npn power transistors 2N6102 2n6103 d escription with to-220 package 2N6102 type with short pin applications for use in general-purpose amplifier and switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter 45 v v ceo collector- emitter voltage open base 45 v v ebo emitter-base voltage open collector 8 v i c collector current 16 a p t total power dissipation t c =25 75 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.67 /w
savantic semiconductor product specification 2 silicon npn power transistors 2N6102 2n6103 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ;i b =0 45 v v ce (sat-1) collector-emitter saturation voltage i c =5a;i b =0.5a 1.3 v v ce (sat-2) collector-emitter saturation voltage i c =16a;i b =3.2a 2.5 v v be-1 base-emitter on voltage i c =5a ; v ce =4v 1.3 v v be-2 base-emitter on voltage i c =16a ; v ce =4v 3.5 v i cbo collector cut-off current v cb =rated v cbo ;i e =0 t c =150 0.5 2.0 ma i ebo emitter cut-off current v eb =8v; i c =0 1.0 ma h fe-1 dc current gain i c =8a ; v ce =4v 15 80 h fe-2 dc current gain i c =15a ; v ce =4v 5 f t transition frequency i c =0.5a ; v ce =4v 0.8 mhz savantic semiconductor product specification 3 silicon npn power transistors 2N6102 2n6103 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm) |
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